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ACE4953B

ACE Technology
Part Number ACE4953B
Manufacturer ACE Technology
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Published Jul 10, 2016
Detailed Description ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technolog...
Datasheet PDF File ACE4953B PDF File

ACE4953B
ACE4953B

Overview
ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Features  VDS(V)=-20V  ID=-5.
5A (VGS=-10V)  RDS(ON)<55mΩ (VGS=-10V)  RDS(ON)<58mΩ (VGS=-4.
5V)  RDS(ON)<80mΩ (VGS=-2.
5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.
5 A -4.
4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.
5 Operating and Storage Temperature Range TJ,...


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