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B0540W

JCET
Part Number B0540W
Manufacturer JCET
Description SCHOTTKY BARRIER DIODE
Published Jul 10, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B0520LW/B0530W/B0540W SCHOTTKY B...
Datasheet PDF File B0540W PDF File

B0540W
B0540W


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-123 Plastic-Encapsulate Diodes B0520LW/B0530W/B0540W SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520LW:SD B0530W:SE B0540W:SF SOD-123 SD SE SD SE Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage RMS Reverse Voltage Reverse Voltage (DC) Average Rectified Output Current #1RW QUHPSHVWLWLYH3HDNForward 6XUJH&urrent Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Voltage Rate of Change Electrical Characteristics @Ta=25℃ Parameter Symbol Minimum reverse b reakdown voltage V(BR) Forward voltage Reverse current Reverse current Capacitance between terminals VF1 VF2 VF3 IR1 IR2 IR3 IR4 IR5 CT SF SF The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
Symbol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG dv/dt B0520LW 20 14 B0530W 30 21 0.
5 5.
5 500 200 125 -55~+150 1000 B0540W Unit 40 V 28 V A A mW ℃/W ℃ ℃ V/μs B0520LW 20 --- 0.
32 0.
385 -75 -250 ---- B0530W -30 -- 0.
375 0.
430 --20 -130 --- B0540W --40 -- 0.
510 0.
62 --10 -20 170 Unit V V μA μA pF Test Conditions IR=250μA IR=200μA IR=20μA IF=0.
1A IF=0.
5A IF=1A VR=10V VR=15V VR=20V VR=30V VR=40V VR=0,f=1MHz www.
cj-elec.
com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 1 oC =100 T a oC =25 FORWARD CURRENT IF (A) 0.
1 T a 0.
01 0.
0 0.
2 0.
4 0.
6 0.
8 FORWARD VOLTAGE VF (V) 1.
0 REVERSE CURRENT IR (uA) B0530W 1000 Reverse Characteristics Ta=100 oC 100 10 Ta=25 oC 1 0.
1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Capacitance Characteristics 1000 Ta=25℃ f=1MHz 100 10 0.
1 1 10 100 REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) Power Derating Curve 600 500 400 300 200 100 0...



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