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40P03GI

Advanced Power Electronics
Part Number 40P03GI
Manufacturer Advanced Power Electronics
Description AP40P03GI
Published Jul 11, 2016
Detailed Description Advanced Power Electronics Corp. AP40P03GI RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-r...
Datasheet PDF File 40P03GI PDF File

40P03GI
40P03GI

Overview
Advanced Power Electronics Corp.
AP40P03GI RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications.
BVDSS RDS(ON) ID -30V 28mΩ -30A G D S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Rating -30 +20 -30 -18 -120 31.
3 0.
25 -55 to 150 -55 to 150 Value 4 65 Units V V A A A W W/℃ ℃ ℃ Units ℃/W ℃/W Data and specifications subject to change without notice 1 200812303 AP40P03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A VGS=-4.
5V, ID=-10A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-10V, ID=-18A Drain-Source Leakage Current VDS=-30V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS= +20V, VDS=0V ID=-18A Gate-Source Charge VDS=-25V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS...


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