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RB751G-40

JCET
Part Number RB751G-40
Manufacturer JCET
Description Schottky barrier Diode
Published Jul 12, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-723 Plastic-Encapsulate Diodes RB751G-40 Schottky barrier Diode ...
Datasheet PDF File RB751G-40 PDF File

RB751G-40
RB751G-40


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-723 Plastic-Encapsulate Diodes RB751G-40 Schottky barrier Diode FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability MARKING: 5 SOD-723 - The marking bar indicates the cathode Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.
3ms Power dissipation Thermal Resistance Junction to Ambient Junction temperature IO IFSM PD RθJA Tj Storage temperature Tstg Limit 40 30 30 200 150 667 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min Typ Max Unit 0.
37 V 0.
5 μA 2 pF Unit V V mA mA mW ℃/W ℃ ℃ Conditions IF=1mA VR=30V VR=1V,f=1MHZ www.
cj-elec.
com 1 E,Mar,2015 Typical Characteristics FORWARD CURRENT I (mA) F Forward Characteristics 100 10...



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