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RJH65T14DPQ-A0

Renesas
Part Number RJH65T14DPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 12, 2016
Detailed Description RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonanc...
Datasheet PDF File RJH65T14DPQ-A0 PDF File

RJH65T14DPQ-A0
RJH65T14DPQ-A0


Overview
RJH65T14DPQ-A0 650V - 50A - IGBT Application: Induction Heating Microwave Oven Features  Optimized for current resonance application  Low collector to emitter saturation voltage VCE(sat) = 1.
45 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25 C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C Data Sheet R07DS1256EJ0110 Rev.
1.
10 Aug 31, 2018 4 123 1.
Gate G 2.
Collector 3.
Emitter 4.
Collector E Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 650 V Gate to emitter voltage Collector current Collector peak current Tc = 25 C Tc = 100 C VGES IC Note1 IC Note1 iC(peak) Note1 30 100 50 180 V A A A Collector to emitter diode Tc = 25 C Forward current Tc = 100 C Collector to emitter diode forward peak current IDF IDF iDF(peak) Note2 40 20 100 A A A Collector dissipation PC 250 W Junction to case thermal impedance (IGBT) j-c Note3 0.
6 C/W Junction to case thermal impedance (Diode) j-cd Note3 1.
33 C/W Junction temperature Tj Note4 175 °C Storage temperature Tstg –55 to +150 °C Note: Continuous heavy condition (e.
g.
high temperature/voltage/current or high variation of temperature) may affect a reliability even if it are within the absolute maximum ratings.
Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data.
R07DS1256EJ0110 Rev.
1.
10 Aug 31, 2018 Page 1 of 9 RJH65T14DPQ-A0 Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off del...


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