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MURF3020CT

Thinki Semiconductor
Part Number MURF3020CT
Manufacturer Thinki Semiconductor
Description 30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Published Jul 13, 2016
Detailed Description MURF3020CT thru MURF3060CT ® Pb Free Plating Product MURF3020CT/MURF3040CT/MURF3060CT Pb 30 Ampere Insulated Common...
Datasheet PDF File MURF3020CT PDF File

MURF3020CT
MURF3020CT

Overview
MURF3020CT thru MURF3060CT ® Pb Free Plating Product MURF3020CT/MURF3040CT/MURF3060CT Pb 30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest P/G technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems Mechanical Data Case: Fully Isolated Molding TO-220FP Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.
0 gram approximately ITO-220AB Unit:mm Case Case Case Case Positive Negative Doubler Series Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "CT" Suffix "CTA" Suffix "CTD" Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MURF3020CT MURF3040CT MURF3060CT UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125oC VRRM VRMS VDC IF(AV) Peak Forward Surge Current, 8.
3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM Maximum Instantaneous Forward Voltage @ 15.
0 A Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) VF IR Trr CJ Operating Junction and Storage Temperature Range TJ, TSTG 200 140 200 0.
98 400 280 400 30.
0 300 1.
3 10 100 35-60 150 -55 to +150 600 V 420 V 600 V A A 1.
7 V uA uA nS pF oC NOTES : (1) Reverse recovery test conditions IF = 0.
5A IR = 1.
0A Irr = 0.
25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.
0 MHz and applied reverse voltage...


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