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DB805D

JILIN SINO
Part Number DB805D
Manufacturer JILIN SINO
Description DUAL NPN TRANSISTOR
Published Jul 13, 2016
Detailed Description NPN Dual NPN high voltage transistors in a single package R DB805D MAIN CHARACTERISTICS IC 4A VCEO 400V PTOT Tamb =...
Datasheet PDF File DB805D PDF File

DB805D
DB805D

Overview
NPN Dual NPN high voltage transistors in a single package R DB805D MAIN CHARACTERISTICS IC 4A VCEO 400V PTOT Tamb = 25 °C single transistor 3W PTOT Tcase = 25 °C single transistor 45W Package APPLICATIONS Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting DIP-8 Internal schematic diagram FEATURES High breakdown voltage Low VCE(sat) Fast switching speed Simplified circuit design Reduced component count ORDER MESSAGE Order codes DB805D Marking DB805D Halogen Free NO Package DIP-8 Packaging Tube 201311A 1/5 R ABSOLUTE RATINGS (Tc=25 ) DB805D — — — puse Parameter Symbol Value Collector- Emitter Voltage VBE=0 Collector- Emitter Voltage IB=0 Emitter-Base Voltage Collector Current DC Collector Current pulse Base Current DC Base Current pulse Total Dissipation ( Tamb = 25 °C single transistor ) Total Dissipation ( Tcase = 25 °C single transistor ) Total Dissipation (TO-220C/262/263) Junction Temperature VCES VCEO VEBO IC ICP IB IBP PTOT PTOT PC Tj 700 400 9 4 8 2 4 3 45 75 150 Storage Temperature Tstg -55~+150 5s Pulse Test: Pulse Width = 5.
0 ms, Duty Cycle < 10%.
Unit V V V A A A A W W W ElECTRICAL CHARACTERISTIC Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Hfe(1) Hfe(2) VCE(sat) VBE(sat) tf ts fT Tests conditions IC=10mA,IB=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=700V, IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE =10V, IC=500mA VCE =5V, IC=2A IC=2A, IB=0.
4A IC=2A, IB=0.
5A VCC=24V IC=2A,IB1=-IB2=0.
4A VCE=10V, IC=0.
5A Value(min) 400 700 9 20 5 4 Value(typ) - Value(max) - 100 50 10 30 1.
0 1.
8 0.
7 5 - THERMAL CHARACTERISTIC Unit V V V µA µA µA V V µS µS MHz Parameter Thermal Resistance Junction Ambient (single transistor) () Thermal Resistance Junction Case (single transistor) Symbol Value(min) Value(max) Unit Rth(j-c) - 42 ℃/W Rth(j-c) - 2.
7 ℃/W 201311A 2/5 VCEsat hFE R ELECTRICAL CHARACTERISTICS (curves) DB805D hFE – IC VBE sat - IC VBEsat VCE(sat)- IC PC-TC POWER DERATING FAC...


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