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BT131

JILIN SINO
Part Number BT131
Manufacturer JILIN SINO
Description TRIACS
Published Jul 15, 2016
Detailed Description R TRIACS BT131 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 1A 600V or 800V 5mA z z APPLICATIONS z AC switching z Pha...
Datasheet PDF File BT131 PDF File

BT131
BT131

Overview
R TRIACS BT131 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 1A 600V or 800V 5mA z z APPLICATIONS z AC switching z Phase control Package Pin 1 2 3 Description 1 MT1 G 2 MT2 TO-92 FEATURES z ， z z RoHS z Planar chip for reliability and uniform z Low on-state voltage and High ITSM z RoHS products ORDER MESSAGES Order code Marking BT131-O-T-N-C BT131 Package TO-92 Packaging Bag ：201510F 1/6 R ABSOLUTE RATINGS (TC=25℃) Parameter Symbol Condition Repetitive peak off-state voltage VDRM On-state RMS current Nonrepetitive surge peak on-state current IT(RMS) ITSM I2t full sine wave full sine wave ,t=20ms full sine wave ,t=16.
7ms t=10ms Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operation junction temperature dI/dt IGM VGM PGM PG(AV) Tstg TVJ ITM=1.
5A, IG=0.
2A, dIG/dt=0.
2A/μs over any 20ms period BT131 Value Unit ±600 ±800 V 1A 12.
5 A 13.
8 1.
28 A A2s 50 A/μs 2A 5V 5W 0.
5 W -40~150 ℃ 125 ℃ ：201510F 2/6 R BT131 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=2A Min Typ Max Unit - 0.
1 0.
5 mA - 1.
2 1.
5 V MT1(-),MT2(+),G(+) - 0.
4 5 mA Gate trigger current IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) - 1.
3 1.
4 5 5 mA mA MT1(+),MT2(-),G(+) - 3.
8 7 mA MT1(-),MT2(+),G(+) - - 1.
5 V Gate trigger voltage Holding current VGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) MT1(+),MT2(-),G(+) IH VDM=12V, IGT=0.
1A - - - 1.
5 V - 1.
5 V - 1.
5 V 1.
3 5 mA MT1(-),MT2(+),G(+) - 1.
2 5 mA Latching current IL VDM=12V, MT1(-),MT2(+),G(-) IGT=0.
1A MT1(+),MT2(-),G(-) - 4.
0 1.
0 8 5 mA mA MT1(+),MT2(-),G(+) - 2.
5 8 mA Rise of off- state voltage dV/dt VDM=67% VDRM(MAX), Tj=125℃, RGK=1KΩ Gate controlled tur...


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