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BT100-6

IK Semiconductor
Part Number BT100-6
Manufacturer IK Semiconductor
Description Sensitive Gate Silicon Controlled Rectifiers
Published Jan 9, 2006
Detailed Description Sensitive Gate Silicon Controlled Rectifiers e w a t a Peak Off-State Voltage : 400V ◇ Repetitive D . ◇w R.M.S On-Stat...
Datasheet PDF File BT100-6 PDF File

BT100-6
BT100-6


Overview
Sensitive Gate Silicon Controlled Rectifiers e w a t a Peak Off-State Voltage : 400V ◇ Repetitive D .
◇w R.
M.
S On-State Current (IT(RMS)=0.
8 A) ◇ Low On-State Voltage (1.
2V(Typ.
)@ITM) w Features General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits.
e h S U 4 t m o .
c BT100-6 Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG Parameter Repetitive Peak Off-state Voltage Average On-State Current R.
M.
S On-State Current Surge On-State Current I²t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature w w w t a .
D S a e h U 4 t e .
c m o Condition Ratings 400 0.
5 0.
8 10 0.
415 2 0.
1 1 5.
0 Units V A A A A² S W Half Sine Wave : TC =74℃ All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave NonRepetitive t = 8.
3ms w w w .
D t -40 a -40 h ~ 125 S a ~ 150 t e e m o c .
A 4U W V ℃ ℃ 1 BT100-6 Electrical Characteristics Ratings Symbol Items VAK=VDRM, Conditions Min Typ ━ ━ 1.
2 ━ ━ Max 10 200 1.
7 200 500 or VRRM:RGK=1000Ω Tc=25℃ Tc=125℃ Unit IDRM Repetitive Peak OffState Current Peak On-State Voltage(1) Gate Trigger Current(2) ━ ━ ━ ㎂ VTM (ITM=1A, Peak) VAK=6V, RL=100Ω Tc=25℃ Tc=-40℃ VD=7V, RL=100Ω Tc=25℃ Tc=-40℃ VAK=12V, RL=100Ω Tc=125℃ V IGT ━ ━ ㎂ VGT Gate Trigger Voltage(2) Non-Trigger Gate Voltage(1) ━ ━ 0.
2 ━ ━ ━ 0.
8 1.
2 ━ V VGD V dv/dt Critical Rate of Rise Off-State Voltage Critical Rate of Rise Off-State Voltage VD=Rated VDRM, Exponential waveform RGK=1000Ω TJ=125℃ 500 800 ━ V/㎲ di/dt IPK=20A ; lgt=20mA PW=10㎲;diG/dt=1A/㎲ ━ ━ 50 A/㎲ IH Rth(j-c) Rth(j-a) Holding Current Thermal Thermal Impedance Impedance VAK=12V, Gate Open Initiating Current=20mA Tc=25℃ Tc=-40℃ Junction ...



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