DatasheetsPDF.com

BT139

JILIN SINO
Part Number BT139
Manufacturer JILIN SINO
Description TRIACS
Published Jul 15, 2016
Detailed Description R TRIACS BT139 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 16A 600V or 800V 10mA z z APPLICATIONS z AC switching z P...
Datasheet PDF File BT139 PDF File

BT139
BT139


Overview
R TRIACS BT139 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 16A 600V or 800V 10mA z z APPLICATIONS z AC switching z Phase control Package Pin 1 2 3 Description 1 MT1 2 MT2 G TO-220/TO-220S TO-220HF FEATURES z 、 z z RoHS z UL : E258645 z Planar chip for reliability and uniform z Low on-state voltage and High ITSM z RoHS products z UL:E258645 ORDER MESSAGES Order code Marking BT139-O-Z-N-C BT139 BT139-O-J-N-B BT139 BT139-O-HF-N-B BT139 Package TO-220 TO-220S TO-220HF Packaging Bag Tube Tube :201510G 1/7 R ABSOLUTE RATINGS (TC=25℃) Parameter Symbol Condition Repetitive peak off-state voltage VDRM On-state RMS current Nonrepetitive surge peak on-state current IT(RMS) ITSM I2t full sine wave full sine wave ,t=20ms full sine wave ,t=16.
7ms t=10ms Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operation junction temperature dI/dt IGM VGM PGM PG(AV) Tstg TVJ ITM=20A, IG=0.
2A, dIG/dt=0.
2A/μs over any 20ms period BT139 Value Unit ±600 ±800 V 16 A 140 A 150 A 98 A2s 50 A/μs 2A 5V 5W 0.
5 W -40~150 ℃ 125 ℃ :201510G 2/7 R BT139 ELECTRICAL CHARACTERISTIC (TC=25℃) Parameter Symbol Condition Peak Repetitive Blocking Current IDRM VDM=VDRM, Tj=125℃, gate open Peak on-state voltage VTM ITM=20A Min Typ Max Unit - 0.
1 0.
5 mA - 1.
2 1.
6 V MT1(-),MT2(+),G(+) - 2.
5 10 mA Gate trigger current IGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) - 4.
0 10 mA 5.
0 10 mA MT1(+),MT2(-),G(+) - 11 25 mA Gate trigger voltage Holding current MT1(-),MT2(+),G(+) VGT VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-) IH VDM=12V, IGT=0.
1A - - - 1.
5 V - 1.
5 V - 1.
5 V 4.
0 30 mA Latching current MT1(-),MT2(+),G(+) IL VDM=12V, MT1(-),MT2(+),G(-) IGT=0.
1A MT1(+),MT2(-),G(-) - 3.
2 25 mA 16 35 mA 4.
0 25 mA Rise of off- state voltage dV/dt V...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)