R TRIACS
BT139
MAIN CHARACTERISTICS
IT(RMS) VDRM IGT
16A 600V or 800V
10mA
z z
APPLICATIONS
z AC switching z Phase control
Package
Pin
1 2 3
Description
1 MT1
2 MT2
G
TO-220/TO-220S
TO-220HF
FEATURES
z 、
z
z RoHS
z UL : E258645
z Planar chip for reliability and uniform
z Low on-state voltage and High ITSM
z RoHS products z UL:E258645
ORDER MESSAGES
Order code
Marking
BT139-O-Z-N-C
BT139
BT139-O-J-N-B
BT139
BT139-O-HF-N-B
BT139
Package TO-220 TO-220S TO-220HF
Packaging Bag Tube Tube
:201510G
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R
ABSOLUTE RATINGS (TC=25℃)
Parameter
Symbol
Condition
Repetitive peak off-state voltage
VDRM
On-state RMS current
Nonrepetitive surge peak on-state current
IT(RMS) ITSM I2t
full sine wave full sine wave ,t=20ms full sine wave ,t=16. 7ms t=10ms
Repetitive rate of rise of on-state current after triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operation junction temperature
dI/dt
IGM VGM PGM PG(AV) Tstg TVJ
ITM=20A, IG=0. 2A, dIG/dt=0. 2A/μs
over any 20ms period
BT139
Value Unit
±600 ±800
V
16 A
140 A
150 A 98 A2s
50 A/μs
2A 5V 5W 0. 5 W -40~150 ℃ 125 ℃
:201510G
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R BT139
ELECTRICAL CHARACTERISTIC (TC=25℃)
Parameter
Symbol
Condition
Peak Repetitive Blocking Current
IDRM
VDM=VDRM, Tj=125℃, gate open
Peak on-state voltage VTM ITM=20A
Min Typ Max Unit
- 0. 1 0. 5 mA
- 1. 2 1. 6 V
MT1(-),MT2(+),G(+) - 2. 5 10 mA
Gate trigger current
IGT
VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω MT1(+),MT2(-),G(-)
-
4. 0 10 mA 5. 0 10 mA
MT1(+),MT2(-),G(+) - 11 25 mA
Gate trigger voltage
Holding current
MT1(-),MT2(+),G(+)
VGT
VDM=12V, MT1(-),MT2(+),G(-) RL=100Ω
MT1(+),MT2(-),G(-)
IH VDM=12V, IGT=0. 1A
-
-
- 1. 5 V - 1. 5 V - 1. 5 V
4. 0 30 mA
Latching current
MT1(-),MT2(+),G(+)
IL
VDM=12V, MT1(-),MT2(+),G(-) IGT=0. 1A
MT1(+),MT2(-),G(-)
-
3. 2 25 mA 16 35 mA 4. 0 25 mA
Rise of off- state voltage
dV/dt V...