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BUZ211

Inchange Semiconductor
Part Number BUZ211
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 15, 2016
Detailed Description isc N-Channel Mosfet Transistor BUZ211 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Powe...
Datasheet PDF File BUZ211 PDF File

BUZ211
BUZ211

Overview
isc N-Channel Mosfet Transistor BUZ211 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current-Single Plused 36 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.
25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-voltage IS= 18A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6.
5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 Gfs Forward Transconductance VDS= 25V；ID=6.
5A td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time VGS=10V; ID=2.
8A; VDD=30V; RGS=50Ω BUZ211 MIN TYPE MAX UNIT 500 V 2.
1 4.
0 V 1.
6 V 0.
8 Ω ±100 nA 250 µA 2.
7 S 75 120 ns 430 140 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide ...


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