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BUZ20

INCHANGE
Part Number BUZ20
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 18, 2020
Detailed Description isc N-Channel Mosfet Transistor BUZ20 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·SOA is Power...
Datasheet PDF File BUZ20 PDF File

BUZ20
BUZ20

Overview
isc N-Channel Mosfet Transistor BUZ20 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
2Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=30℃ 12 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junct...


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