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1N8033-GA

GeneSiC
Part Number 1N8033-GA
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published Jul 15, 2016
Detailed Description 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum op...
Datasheet PDF File 1N8033-GA PDF File

1N8033-GA
1N8033-GA

Overview
1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.
5 / TO – 276 (Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industry’s lowest device capacitance  Ideal for output switching of power supplies  Best in class reverse leakage current at operating temperature Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC) Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave VRRM IF IF IF(RMS) IF,SM TC = 25 °C TC ≤ 225 °C TC ≤ 225 °C TC = 25 °C, tP = 10 ms Non-repetitive peak forward current I2t value IF,max ∫i2 dt TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms Power dissipation Operating and storage temperature Ptot Tj , Tstg TC = 25 °C Values 650 8 4.
3 8 32 120 5 163 -55 to 250 Unit V A A A A A A2S W °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Total capacitive charge Switching time Total capacitance VF IF = 5 A, Tj = 25 °C IF = 5 A, Tj = 250 °C IR VR = 650 V, Tj = 25 °C VR = 650 V...


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