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62T03GH

Advanced Power Electronics
Part Number 62T03GH
Manufacturer Advanced Power Electronics
Description AP62T03GH
Published Jul 18, 2016
Detailed Description Advanced Power Electronics Corp. AP62T03GH/J RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Ga...
Datasheet PDF File 62T03GH PDF File

62T03GH
62T03GH

Overview
Advanced Power Electronics Corp.
AP62T03GH/J RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D BVDSS 30V RDS(ON) 12mΩ G ID 54A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 IAR TSTG TJ Avalanche Current Storage Temperature Range Operating Junction Temperature Range G D S TO-251(J) Rating 30 +20 54 38 120 47 0.
31 20 20 -55 to 175 -55 to 175 Units V V A A A W W/℃ mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 3.
2 62.
5 110 Units ℃/W ℃/W ℃/W 1 200903124 AP62T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.
5V, ID=15A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=20A Drain-Source Leakage Current VDS=30V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=24V,...


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