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HRLS43N06H

Part Number	HRLS43N06H
Manufacturer	SemiHow
Description	N-Channel Trench MOSFET
Published	Jul 18, 2016
Detailed Description	HRLS43N06H April 2016 HRLS43N06H 60V N-Channel Trench MOSFET Features High Speed Power Switching, Logic Level Enh...
Datasheet	HRLS43N06H PDF File

Overview

HRLS43N06H April 2016 HRLS43N06H 60V N-Channel Trench MOSFET Features High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools UPS, Motor Control Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.
5V Value 60 140 3.
6 4.
6 Unit V A Pȍ Pȍ Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current TC = 25୅ TC = 100୅ IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy L=0.
1mH PD Power Dissipation TC= 25୅ TJ, TSTG Operating and Storage Temperature Range * Drain current limited by maximum junction temperature 60 ρ20 140 * 100 * 410 * 211 39 -55 to +175 Units V V A A A mJ W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient Typ.
--- Max.
3.
8 62.
5 Units ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͧ͑͢͡ HRLS43N06H Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A VGS = 4.
5 V, ID = 20 A VDS = 5, ID = 20 A 1.
0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 60 V, VGS = 0 V VDS = 60 V, TJ = 100୅ VGS = ρ20 V, VDS = 0 V 60 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 30 V, VGS = 0 V, f = 1.
0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(o...

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HRLS43N06H N-Channel Trench MOSFET - SemiHow

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