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HRLU85N10H

SemiHow
Part Number HRLU85N10H
Manufacturer SemiHow
Description N-Channel Trench MOSFET
Published Jul 18, 2016
Detailed Description HRLU85N10H Fab 2016 HRLU85N10H 100V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enha...
Datasheet PDF File HRLU85N10H PDF File

HRLU85N10H
HRLU85N10H

Overview
HRLU85N10H Fab 2016 HRLU85N10H 100V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capability ‰ Enhanced Avalanche Ruggedness ‰ 100% UIS Tested, 100% Rg Tested ‰ Lead free, Halogen Free Application ‰ DC-DC Conversion ‰ Hard Switching and High Speed Circuit ‰ Power Tools ‰ UPS, SSR Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.
5V Value 100 105 7.
1 8.
4 Unit V A Pȍ Pȍ Package & Internal Circuit I-PAK G D S Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ Single Pulsed Avalanche Energy L=0.
1mH Power Dissipation TC= 25୅ Operating and Storage Temperature Range 100 ρ20 105 74 350 80 150 -55 to +175 Units V V A A A mJ W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient Typ.
--- Max.
1.
0 62.
5 Units ୅/W ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΒΓ͑ͣͧ͑͢͡ HRLU85N10H Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance Off Characteristics VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 20 A VGS = 4.
5 V, ID = 20 A VDS = 5, ID = 20 A 1.
0 ---- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 100 V, VGS = 0 V VDS = 100 V, TJ = 100୅ VGS = ρ20 V, VDS = 0 V 100 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 50 V, VGS = 0 V, f = 1.
0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDS = 50 V, ID = 20 A, RG = 10 Ÿ Qg (10V) Qg (...


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