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HRP140N06K

SemiHow
Part Number HRP140N06K
Manufacturer SemiHow
Description N-Channel Trench MOSFET
Published Jul 18, 2016
Detailed Description HRP140N06K HRP140N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technol...
Datasheet PDF File HRP140N06K PDF File

HRP140N06K
HRP140N06K

Overview
HRP140N06K HRP140N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 11.
5 mΩ (Typ.
) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 11.
5mΩ ID = 40 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 60 40 28 140 ±20 145 5 50 0.
33 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
3.
0 -62.
5 Units ℃/W ◎ SEMIHOW REV.
A0,December 2014 HRP140N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 15 A 2.
2 -- gFS Forward Transconductance Off Characteristics VDS = 20, ID = 15 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 ㎂ VDS = 48 V, VGS = 0 V VDS = 48 V, TJ = 125℃ VGS = ±20 V, VDS = 0 V 60 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1.
0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz ----- td(on) Turn-O...


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