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KSB13003E

SemiHow
Part Number KSB13003E
Manufacturer SemiHow
Description NPN Silicon Power Transistor
Published Jul 18, 2016
Detailed Description KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A Genera...
Datasheet PDF File KSB13003E PDF File

KSB13003E
KSB13003E

Overview
KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.
5A General Description • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls • 150୅ Max.
Operating temperature • 8KV ESD proof at HBM (C=100໲, R=1.
5໰) Features • VCBO = 700V • VCEO = 400V • VBEO = 9V • IC = 1.
5A TO-92 TO-251 TO-252 2 3 2 1 3 2 1 3 1 Ordering Information Ordering number KSB13003E KSB13003ER KSU13003E KSU13003ER KSD13003E KSD13003ER Package TO-92 TO-92 TO-251 TO-251 TO-252 TO-252 Pin Assignment 123 BCE ECB BCE ECB BCE ECB Packing Ammo Ammo Tube Tube Reel Reel క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.
5A Absolute Maximum Ratings TC=25୅ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25୅) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG TO-92 1.
1 RATING 700 400 9 1.
5 3 0.
75 150 -65~150 TO-251(2) 25 UNIT V V V A A A W ୅ ୅ Electrical Characteristics TC=25୅ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Base Breakdown Voltage VCBO IC=500ȝA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=5V,IC=0.
2A VCE=5V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) IC=0.
5A,IB=0.
1A IC=1A,IB=0.
25A IC=1.
5A,IB=0.
5A *Base-Emitter Saturation Voltage VBE(sat) IC=0.
5A,IB=0.
1A IC=1A,IB=0.
25A Output Capacitance Cob VCB=10V, f=0.
1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.
1A Turn on Time Storage Time Fall Time ton Vcc=125V, Ic=2A tstg IB1=0.
2A, IB2= -0.
2A tF RL=125ȍ * Pulse Test: Pulse Width”ȝV'XW\&\FOH” Min Typ.
Max Unit 700 V 400 V 10 ᒺ 20 40 5 0.
5 V 1.
0 V 3.
0 V 1.
2 V 1.
4 V...


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