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SIS902DN

Vishay
Part Number SIS902DN
Manufacturer Vishay
Description Dual N-Channel MOSFET
Published Jul 19, 2016
Detailed Description Dual N-Channel 75-V (D-S) MOSFET SiS902DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.186 at VGS = 10 V ...
Datasheet PDF File SIS902DN PDF File

SIS902DN
SIS902DN

Overview
Dual N-Channel 75-V (D-S) MOSFET SiS902DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
186 at VGS = 10 V 75 0.
228 at VGS = 4.
5 V ID (A) 4e 4e Qg (Typ.
) 2.
1 nC PowerPAK 1212-8 3.
30 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 3.
30 mm S2 3 G2 4 Bottom View Ordering Information: SiS902DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.
07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • POL D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 75 ± 20 V TC = 25 °C 4e Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID 4e 3a, b 2.
4a, b A Pulsed Drain Current IDM 8 Avalanche Current Single-Pu...


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