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2N2222A

ON Semiconductor
Part Number 2N2222A
Manufacturer ON Semiconductor
Description Small Signal Switching Transistor
Published Jul 20, 2016
Detailed Description 2N2222A Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, ...
Datasheet PDF File 2N2222A PDF File

2N2222A
2N2222A

Overview
2N2222A Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PT PT TJ, Tstg 50 75 6.
0 800 500 1.
0 −65 to +200 Vdc Vdc Vdc mAdc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 325 °C/W Thermal Resistance, Junction to Case RqJC 150 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
http://onsemi.
com COLLECTOR 3 2 BASE 1 EMITTER TO−18 CASE 206AA STYLE 1 ORDERING INFORMATION Device Package Shipping JAN2N2222A JANTX2N2222A TO−18 Bulk JANTXV2N2222A © Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev.
2 1 Publication Order Number: 2N2222A/D 2N2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)CEO 50 − Vdc Collector−Base Cutoff Current (VCB = 75 Vdc) (VCB = 60 Vdc) Emitter−Base Cutoff Current (VEB = 6.
0 Vdc) (VEB = 4.
0 Vdc) Collector−Emitter Cutoff Current (VCE = 50 Vdc) ICBO IEBO ICES − 10 mAdc − 10 nAdc − 10 mAdc − 10 nAdc − 50 nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.
1 mAdc, VCE = 10 Vdc) (IC = 1.
0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (IC = 150 mAdc, ...


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