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2N2221

CDIL
Part Number 2N2221
Manufacturer CDIL
Description NPN SILICON PLANAR SWITCHING TRANSISTORS
Published May 12, 2014
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING...
Datasheet PDF File 2N2221 PDF File

2N2221
2N2221

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 VCEO Collector Emitter Voltage 30 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VEBO IC PD PD Tj, Tstg 5 800 500 2.
28 1.
2 6.
85 -65 to +200 UNIT V V V mA mW mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current BVCEO BVCBO BVEBOf ICBO IC=10mA,IB=0 IC=10µA.
IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VALUE MIN MAX 30 60 5V 10 10 0.
4 1.
6 1.
3 2.
6 UNIT V V nA µA V V V V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VCB=50V, IE=0 Ta=150 º C VCE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA 0.
6 Continental Device India Limited Data Sheet Page 1 of 4 http://www.
Datasheet4U.
com NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE IC=0.
1mA,V CE=10V* IC=1mA,V CE=10V IC=10mA,VCE=10V* IC=150mA,VCE=1V* IC=150mA,VCE=1V* IC=500mA,VCE=10V* 2221 MIN MAX 20 25 35 20 40 120 20 2222 MIN MAX 35 50 75 50 100 300 30 UNIT DYNAMIC CHARACTERISTICS Transition Frequency fT IC=20mA, VCE=20V f=100MHz VCB=10V, IE=0 f=100KHz VEB=0.
5V, IC=0 f=100kHz 250 250 MHz Output Capacitance Cob 8 8 pF Input Capacitance Cib 30 30 pF SWITCHING CHARACTERISTICS Delay time Rise time Storage time Fall time td IC=150mA...


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