DatasheetsPDF.com

2N2222A

Diotec
Part Number 2N2222A
Manufacturer Diotec
Description Si-Epitaxial Transistors
Published Jul 20, 2016
Detailed Description PN2222A / 2N2222A PN2222A / 2N2222A NPN General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistor...
Datasheet PDF File 2N2222A PDF File

2N2222A
2N2222A

Overview
PN2222A / 2N2222A PN2222A / 2N2222A NPN General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2005-11-17 Power dissipation Verlustleistung E BC Plastic case Kunststoffgehäuse 16 9 18 Weight approx.
– Gewicht ca.
2 x 2.
54 Dimensions / Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.
18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt.
- Kollektor-Emitter-Spannung E open Collector-Emitter-volt.
- Kollektor-Emitter-Spannung B open Emitter-Base-voltage - Emitter-Basis-Spannung C open Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom (tp < 5 ms) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur VCB0 VCE0 VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25°C) PN2222A / 2N2222A 75 V 40 V 6V 625 mW 1) 600 mA 800 mA -65.
.
.
+150°C -65…+150°C Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V Collector saturation voltage – Kollektor-Sättigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2) Base saturation-voltage – Basis-Sättigungsspannung IC = 150 mA, IB = 15 mA 2) IC = 500 mA, IB = 50 mA 2) Kennwerte (Tj = 25°C) Min.
Typ.
Max.
ICB0 – – 10 nA VCEsat VCEsat – – – 0.
3 V – 1V VBEsat 0.
6 V – 1.
2 V VBEsat – – 2V 1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.
diotec.
com/ 1 Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis IC = 0.
1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)