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CM1000HA-24H

Mitsubishi Electric Semiconductor
Part Number CM1000HA-24H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B ...
Datasheet PDF File CM1000HA-24H PDF File

CM1000HA-24H
CM1000HA-24H


Overview
MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.
) R K P E M G B S - M8 THD (2 TYP.
) A C E C J G Q T - DIA.
(4 TYP.
) H L F N E D Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of one IGBT in a single configuration with a reverse-connected superfast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.
e.
CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBT Module.
Type CM Current Rating Amperes 1000 VCES Volts (x 50) 24 E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.
12 4.
33±0.
01 1.
840 Millimeters 130.
0 110.
0±0.
25 46.
75 Dimensions L M N P Q R S T U Inches 0.
79 0.
77 0.
75 0.
61 0.
51 0.
35 M8 Metric 0.
26 Dia.
M4 Metric Millimeters 20.
0 19.
5 19.
0 15.
6 13.
0 9.
0 M8 Dia.
6.
5 M4 1.
73+0.
04/–0.
02 44.
0+1.
0/–0.
5 1.
46+0.
04/–0.
02 37.
0+1.
0/–0.
5 1.
42 1.
25 1.
18 1.
10 1.
08 36.
0 31.
8 30.
0 28.
0 27.
5 Sep.
1998 MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C) Mounting Torque, M8 Main Terminal Mounting, Torque M6 Mounting Mounting, Torque M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate...


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