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A2I20H060GNR1

Freescale Semiconductor
Part Number A2I20H060GNR1
Manufacturer Freescale Semiconductor
Description RF LDMOS Wideband Integrated Power Amplifiers
Published Jul 20, 2016
Detailed Description Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev. 0, 2/2016 RF LDMOS Wideband Integrated Power A...
Datasheet PDF File A2I20H060GNR1 PDF File

A2I20H060GNR1
A2I20H060GNR1

Overview
Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev.
0, 2/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz.
This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
1800 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.
65 Vdc, VPGroSb2aBb=ilit1y.
3onVdCcC, DPFou.
t(1=) 12 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Frequency Gps (dB) PAE (%) ACPR (dBc) 1805 MHz 1840 MHz 1880...


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