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IXYH40N120B3D1

IXYS
Part Number IXYH40N120B3D1
Manufacturer IXYS
Description IGBT
Published Jul 21, 2016
Detailed Description 1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110...
Datasheet PDF File IXYH40N120B3D1 PDF File

IXYH40N120B3D1
IXYH40N120B3D1

Overview
1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 40A 2.
9V 183ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 86 A 40 A 25 A 180 A 20 A 400 mJ ICM = 80 ≤@VCE VCES 480 A W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
6g TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast D...


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