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CM100DY-12H

Mitsubishi Electric Semiconductor
Part Number CM100DY-12H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M...
Datasheet PDF File CM100DY-12H PDF File

CM100DY-12H
CM100DY-12H

Overview
MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA.
(2 TYP.
) D M G1 E1 J C2E1 E2 C1 N (3 TYP.
) R S - M5 THD (3 TYP.
) R R TAB#110 t=0.
5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Ope...


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