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MTB17A03Q8

Cystech Electonics
Part Number MTB17A03Q8
Manufacturer Cystech Electonics
Description Dual N-Channel Logic Level Enhancement Mode MOSFET
Published Jul 24, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C729Q8 Issued Date : 2009.07.01 Revised Date : 2019.03.26 Page No. : 1/ 9 Dual N...
Datasheet PDF File MTB17A03Q8 PDF File

MTB17A03Q8
MTB17A03Q8

Overview
CYStech Electronics Corp.
Spec.
No.
: C729Q8 Issued Date : 2009.
07.
01 Revised Date : 2019.
03.
26 Page No.
: 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTB17A03Q8 BVDSS ID @ VGS=10V, TA=25 C RDSON(TYP) VGS=10V, ID=10A VGS=4.
5V, ID=6A 30V 10A 8.
6mΩ 12.
6mΩ Description The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features • RDS(ON)=15mΩ(max.
)@VGS=10V, ID=10A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & halogen-free package Equivalent Circuit MTB17A03Q8 Outline SOP-8 G：Gate S：Source D：Drain MTB17A03Q8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C729Q8 Issued Date : 2009.
07.
01 Revised Date : 2019.
03.
26 Page No.
: 2/ 9 Ordering Information Device MTB17A03Q8-0-T3-G Package SOP-8 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V, TA=25 C Continuous Drain Current, VGS=10V, TA=70 C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.
1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note 2) (Note 3) Symbol VDS VGS ID IDM IAS EAS EAR PD Tj ; Tstg Limits 30 ±20 10 8.
4 40 10 5 2.
5 2.
4 1.
7 -55~+175 Unit V A mJ W C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, ma...


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