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25N06

Inchange Semiconductor
Part Number 25N06
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
Published Jul 24, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25...
Datasheet PDF File 25N06 PDF File

25N06
25N06

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 60 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
25 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 25A ;VGS= 0 VGS= 10V; ID= 12.
5A VGS= ±20V;VDS= 0 VDS=60V; VGS= 0 MIN TYPE MAX UNIT 60 V 2.
0 4.
0 V 1.
5 V 0.
065 Ω ±100 nA 10 µA · isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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