DatasheetsPDF.com

DTESD7V0LED02

JCET
Part Number DTESD7V0LED02
Manufacturer JCET
Description ESD Protection Diode
Published Jul 24, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 Uni-direction ESD...
Datasheet PDF File DTESD7V0LED02 PDF File

DTESD7V0LED02
DTESD7V0LED02


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD WBFBP-02C Plastic-Encapsulate Diodes DTESD7V0LED02 Uni-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
WBFBP-02C FEATURES  Uni-directional ESD protection of one line  Reverse stand−off voltage: 7V  Low reverse clamping voltage  Low leakage current  Excellent package:1.
0mm×0.
6mm×0.
5mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  Audio and video equipment  10/100/1000 Mbit/s Ethernet  Cellular handsets and accessories MARKING  Portable electronics  FireWire  Other electronics equipments communi- cation systems X7 = Device code The dot indicates the cathode Front side www.
cj-elec.
com 1 C, Feb,2014 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) DTESD7V0LED02 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 150 10 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses.
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit kV W A ℃ ℃ ℃ ESD standards compliance IEC61000-4-2 Standard C...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)