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DTESDB5V0LED02

Part Number	DTESDB5V0LED02
Manufacturer	JCET
Description	ESD Protection Diode
Published	Jul 24, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DTESDB5V0LED02 ESD Protection D...
Datasheet	DTESDB5V0LED02 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD WBFBP-02C Plastic-Encapsulate Diodes DTESDB5V0LED02 ESD Protection Diode DESCRIPTION The DTESDB5V0LED02 is designed to protect voltage sensitive components from ESD.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium.
WBFBP-02C (1.
0×0.
6×0.
5) unit: mm FEATURES z Stand−off Voltage: 5.
0 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) Per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z IEC61000−4−4 Level 4 EFT Protection z This is a Pb−Free Device MARKING：EB Maximum Ratings @Ta=25℃ IEC61000−4−2(ESD) ESD Voltage Parameter Air Contact Per Human Body Model Per Machine Model Symbol Limit ±30 ±30 16 400 Total Power Dissipation on FR-5 Board (Note 1) PD 100 Thermal Resistance Junction−to−Ambient RΘJA 1250 Lead Solder Temperature − Maximum (10 Second Duration) TL 260 Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Stresses exceeding maximum ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the recommended.
Operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device reliability.
1.
FR−5 = 1.
0 x 0.
75 x 0.
62 in.
Unit KV KV V mW ℃/W ℃ ℃ A,May,2011 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Max.
Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Device Device Marking VRWM (V) Max IR (μA) @ VRWM Max VBR (V) @ IT (Note 2) ...

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