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ESDBL5V0F2

JCET
Part Number ESDBL5V0F2
Manufacturer JCET
Description ESD Protection Diode
Published Jul 24, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03E Plastic-Encapsulate Diodes ESDBL5V0F2 Bi-direction ESD Prot...
Datasheet PDF File ESDBL5V0F2 PDF File

ESDBL5V0F2
ESDBL5V0F2

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD WBFBP-03E Plastic-Encapsulate Diodes ESDBL5V0F2 Bi-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
WBFBP-03E FEATURES  Bi-directional ESD protection of one line  Low capacitance: 10pF(Typ.
)  Low reverse stand−off voltage: 5V  Low reverse clamping voltage  Low leakage current  Excellent package:1.
0mm×0.
6mm×0.
5mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS  Computers and peripherals  PAD  Digital camera  Cellular handsets and accessories MARKING H  Portable electronics  LCD TV  Other electronics equipments communication systems H = Device code Solid dot=Pin1 indicator Front side www.
cj-elec.
com 1 B,Jun,2014 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) ESDBL5V0F2 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 50 5 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses.
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
Unit kV W A ℃ ℃ ℃ ESD standards compliance IEC6100...


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