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ESDBP5V0D3

JCET
Part Number ESDBP5V0D3
Manufacturer JCET
Description ESD Protection Diode
Published Jul 24, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes ESDBP5V0D3 Bi-direction ESD Prote...
Datasheet PDF File ESDBP5V0D3 PDF File

ESDBP5V0D3
ESDBP5V0D3


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-323 Plastic-Encapsulate Diodes ESDBP5V0D3 Bi-direction ESD Protection Diode DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients.
Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD.
The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces.
It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
SOD-323 FEATURES  Bi-directional ESD protection of one line  Reverse stand−off voltage: 5V  Low reverse clamping voltage  Low leakage current  Excellent package:1.
7mm×1.
3mm×1.
0mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 4 ESD protection APPLICATIONS z Computers and peripherals z Control & monitoring systems z Audio and video equipment z Cellular handsets and accessories MARKING 05C 05C z Portable electronics z Set-top box z Other electronics equipments communi- cation systems 05C = Device code Solid dot = Green molding compound device,if none, the normal device Front side www.
cj-elec.
com 1 A-1,Jan,2015 CHANGJIANG ELEC.
TECH.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) ESDBP5V0D3 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±25 ±25 ±16 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.
4 750 30 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).
Device stressed with ten non-repetitive ESD pulses.
(2).
Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC...



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