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IS42VS16160D

Integrated Silicon Solution
Part Number IS42VS16160D
Manufacturer Integrated Silicon Solution
Description 256-MBIT SYNCHRONOUS DRAM
Published Jul 25, 2016
Detailed Description IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONO...
Datasheet PDF File IS42VS16160D PDF File

IS42VS16160D
IS42VS16160D

Overview
IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY 2009 FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 1.
8V + 0.
1V • LVCMOS interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 8K refresh cycles every 16 ms (A2 grade) or 8K refresh cycles every 64 ms (Commercial, Industrial, A1 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command OPTIONS • Package: 54-pin TSOP-II (x8 and x16) 54-ball TF-BGA (x16 only) • Operating Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive G...


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