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CM200DU-12F

Powerex Power Semiconductors
Part Number CM200DU-12F
Manufacturer Powerex Power Semiconductors
Description IGBT Module
Published Mar 23, 2005
Detailed Description CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual...
Datasheet PDF File CM200DU-12F PDF File

CM200DU-12F
CM200DU-12F

Overview
CM200DU-12F Powerex, Inc.
, 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications.
Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.
e.
CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 C2E1 E2 C1 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.
70 1.
89 3.
15± 0.
01 0.
43 0.
16 0.
71 0.
02 Millimeters 94.
0 48.
0 80.
0± 0.
25 11.
0 4.
0 18.
0 0.
5 Dimensions J K L M N P Q R Inches 0.
53 0.
91 1.
13 0.
67 0.
28 M5 0.
26 Dia.
0.
16 Millimeters 13.
5 23.
0 28.
7 17.
0 7.
0 M5 6.
5 Dia.
4.
0 1.
18 +0.
04/-0.
02 30.
0 +1.
0/-0.
5 1 Powerex, Inc.
, 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6...


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