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IS43R86400E

Part Number	IS43R86400E
Manufacturer	Integrated Silicon Solution
Description	512Mb DDR SDRAM
Published	Jul 25, 2016
Detailed Description	IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013 ...
Datasheet	IS43R86400E PDF File

Overview

IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013 FEATURES • VDD and VDDQ: 2.
5V ± 0.
2V (-5, -6) • VDD and VDDQ: 2.
5V ± 0.
1V (-4) • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs • Differential clock inputs (CK and CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Four internal banks for concurrent operation • Data Mask for write data.
DM masks write data at both rising and falling edges of data strobe • Burst Length: 2, 4 and 8 • Burst Type: Sequential and Interleave mode • Programmable CAS latency: 2, 2.
5 and 3 • Auto Refresh and Self Refresh Modes • Auto P...

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