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CM200E3U-12H

Mitsubishi Electric Semiconductor
Part Number CM200E3U-12H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G2...
Datasheet PDF File CM200E3U-12H PDF File

CM200E3U-12H
CM200E3U-12H

Overview
MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 L 2 - Mounting Holes (6.
5 Dia.
) V M N TAB#110 t=0.
5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Application: ٗ Brake Ordering Information: Example: Select the complete module number you desire from the table - i.
e.
CM200E3U-12H is a 600V (VCES), 200 Ampere IGBT Module.
Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J L Inches 3.
7 3.
15±0.
01 1.
89 0.
94 0.
28 0.
67 0.
91 0.
91 0.
43 0.
16 Millimeters 94.
0 80.
0±0.
25 48.
0 24.
0 7.
0 17.
0 23.
0 23.
0 11.
0 4.
0 Dimensions M N O P Q R S T U V Inches 0.
47 0.
53 0.
1 0.
63 0.
98 Millimeters 12.
0 13.
5 2.
5 16.
0 25.
0 1.
18 +0.
04/-0.
02 30.
0 +1.
0/-0.
5 0.
3 0.
83 0.
16 0.
51 7.
5 21.
2 4.
0 13.
0 Sep.
1998 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.
) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – –...


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