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CM200TU-12F

Powerex Power Semiconductors
Part Number CM200TU-12F
Manufacturer Powerex Power Semiconductors
Description IGBT Module
Published Mar 23, 2005
Detailed Description CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six ...
Datasheet PDF File CM200TU-12F PDF File

CM200TU-12F
CM200TU-12F

Overview
CM200TU-12F Powerex, Inc.
, 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 200 Amperes/600 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.
) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N V W - THICK x X - WIDE TAB (12 PLACES) H L C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications.
Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode ...


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