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CM300DU-12F

Mitsubishi Electric Semiconductor
Part Number CM300DU-12F
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE CM300DU-12F ¡IC ...
Datasheet PDF File CM300DU-12F PDF File

CM300DU-12F
CM300DU-12F

Overview
MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE CM300DU-12F ¡IC .
.
300A ¡VCES 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 93 ±0.
25 14 14 Tc measured point 14 RTC E2 G2 6 C2E1 E2 RTC C1 48 ±0.
25 CM G1 E1 6 CIRCUIT DIAGRAM C2E1 E2 C1 25 3-M6 NUTS 4-φ6.
5 MOUNTING HOLES 25 21.
5 2.
5 4 18 7 18 7 18 2.
8 7.
5 8.
5 0.
5 0.
5 0.
5 0.
5 29 +1.
0 –0.
5 22 LABEL Aug.
1999 4 G1 E1 15 62 E2 G2 MITSUBISHI IGBT MODULES CM300DU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 300 600 300 600 780 –40 ~ +150 –40 ~ +125 2500 3.
5 ~ 4.
5 3.
5 ~ 4.
5 400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min.
Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC...


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