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CM30TF-12H

Mitsubishi Electric Semiconductor
Part Number CM30TF-12H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA. (2 TYP.) H N H G...
Datasheet PDF File CM30TF-12H PDF File

CM30TF-12H
CM30TF-12H

Overview
MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA.
(2 TYP.
) H N H GVP EVP GWP EWP P D J U N GUN EUN GVN EVN GWN EWN V W L E R Q B R Q R P TAB #250, t = 0.
8 TAB #110, t = 0.
5 G M F R P Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.
e.
CM30TF-12H is a 600V (VCES), 30 Ampere SixIGBT Module.
Type CM Current Rating Amperes (30) 30 VCES Volts (x 50) 12 GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.
21 3.
66±0.
01 3.
19 1.
77 1.
18 1.
11 1.
05 0.
85 0.
83 Millimeters 107.
0 93.
0±0.
2 81.
0 45.
0 30.
0 28.
2 26.
6 21.
5 21.
0 Dimensions K L M N P Q R S Inches 0.
79 0.
71 0.
69 0.
69 0.
63 0.
55 0.
30 0.
22 Dia.
Millimeters 20.
0 18.
0 17.
5 17.
5 16.
0 14.
0 7.
5 Dia.
5.
5 Sep.
1998 MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Base...


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