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D45VH1

Part Number	D45VH1
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Jul 28, 2016
Detailed Description	isc Silicon PNP Power Transistors D45VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement t...
Datasheet	D45VH1 PDF File

Overview

isc Silicon PNP Power Transistors D45VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters.
They are also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D45VH 1 -50 VCEV Collector-Emitter Voltage D45VH 4 -70 V D45VH 7 -80 D45VH 10 -100 D45VH 1 -30 VCEO Collector-Emitter Voltage D45VH 4 -45 V D45VH 7 -60 D45VH 10 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -20 A 83 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT D45VH 1 -30 VCEO(SUS) Collector-Emitter Sustaining Voltage D45VH 4 D45VH 7 D45VH 10 IC= -25mA ;IB= 0 -45 V -60 -80 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.
8A -1.
0 V VCE(sat)-2 VBE(sat) ICEV IEBO Collector-Emitter Saturation Voltage IC= -15A ;IB= -3A;TC=100℃ Base-Emitter Saturation Voltage Collector Cutoff Current IC= -8A ;IB= -0.
8A IC= -8A ;IB= -0.
8A;TC=100℃ VCE=RatedVCE;VBE(off)=-4V VCE=RatedVCE;VBE(off)=-4V;TC=100℃ Emitter Cutoff Current VEB= -7V; IC= 0 -1.
5 V -1.
0 -1.
5 V -10 -100 μA -10 μA hFE-1 hFE-2 COB DC Current Gain DC Current Gain Output Capacitance IC= -2A ; VCE= -1V 35 IC= -4A ; VCE= -1V 20 IE= 0;VCB= -10V,ftest= 1.
0MHz ...

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