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CM350DU-5F

Mitsubishi Electric Semiconductor
Part Number CM350DU-5F
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point E K(4 - Mounting Hole...
Datasheet PDF File CM350DU-5F PDF File

CM350DU-5F
CM350DU-5F

Overview
MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point E K(4 - Mounting Holes) H D C F CM J H 3 - M6 NUTS R R G TAB #110, t = 0.
5 M P M P M N L Q Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ ...


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