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C5609

Panasonic Semiconductor
Part Number C5609
Manufacturer Panasonic Semiconductor
Description 2SC5609
Published Jul 31, 2016
Detailed Description Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.33+–00..002...
Datasheet PDF File C5609 PDF File

C5609
C5609

Overview
Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.
33+–00.
.
0025 Unit: mm 0.
10+–00.
.
0025 3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 ■ Features • High forward current transfer ratio hFE 5˚ • SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C 0.
23+–00.
.
0025 12 (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5˚ 0.
15 min.
/ Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 50 0 to 0.
01 0.
52±0.
03 V n d ge.
ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 100 mW n u duct type Junction temperature Tj 125 °C te tin Pro ued Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 3F 0.
15 max.
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.
1 µA D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA inten ance Forward current transfer ratio hFE1 VCE = 10 V, IC = 2 mA 180 390  Ma inten hFE2 VCE = 2 V, IC = 100 mA 90  ma Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.
1 0.
3 V ned Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz (pla Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.
5 pF (Common base, input o...


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