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IS45SM16160E

Part Number	IS45SM16160E
Manufacturer	ISSI
Description	4M x 16Bits x 4Banks Mobile Synchronous DRAM
Published	Aug 1, 2016
Detailed Description	IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 26...
Datasheet	IS45SM16160E PDF File

Overview

IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.
These products are offering fully synchronous operation and are referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve high bandwidth.
All input and output voltage levels are compatible with LVCMOS.
Features  JEDEC standard 3.
3V, 2.
5V, 1.
8V power supply.
• Auto refresh and self refresh.
• All pins are compatible with LVCMOS interface.
• 8K refresh cycle / 64ms.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• All inputs and outputs referenced to the positive edge of the system clock.
• Data mask function by DQM.
• Internal 4 banks operation.
• B...

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IS45SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM - ISSI

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