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CBS10S30

Toshiba
Part Number CBS10S30
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Aug 1, 2016
Detailed Description Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circu...
Datasheet PDF File CBS10S30 PDF File

CBS10S30
CBS10S30

Overview
Schottky Barrier Diode Silicon Epitaxial CBS10S30 1.
Applications • High-Speed Switching 2.
Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.
0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrea...


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