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CCS15S30

Toshiba
Part Number CCS15S30
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Aug 1, 2016
Detailed Description Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features (1) Low forward vol...
Datasheet PDF File CCS15S30 PDF File

CCS15S30
CCS15S30

Overview
Schottky Barrier Diode Silicon Epitaxial CCS15S30 1.
Applications • High-Speed Switching 2.
Features (1) Low forward voltage: VF(1) = 0.
33 V (typ.
) 3.
Packaging and Internal Circuit CCS15S30 1: Cathode 2: Anode CST2C 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.
5 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant ch...


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