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CMS30I30A

Toshiba
Part Number CMS30I30A
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Aug 1, 2016
Detailed Description Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Pro...
Datasheet PDF File CMS30I30A PDF File

CMS30I30A
CMS30I30A

Overview
Schottky Barrier Diode CMS30I30A 1.
Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2.
Features (1) Peak forward voltage: VFM = 0.
49 V (max)@IF = 3.
0 A (2) Average forward current: IF(AV) = 3.
0 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: M-FLATTM 3.
Packaging and Internal Circuit Pin Assignment CMS30I30A 1: Anode 2: Cathode 3-4E1S 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM  30 V Average forward current IF(AV) (Note 1) 3.
0 A Non-repetitive peak forward surge current IFSM (Note 2) 30 Junction temperature Tj  150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may caus...


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