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CRS20I30B

Toshiba
Part Number CRS20I30B
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Aug 1, 2016
Detailed Description Schottky Barrier Diode CRS20I30B 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Pro...
Datasheet PDF File CRS20I30B PDF File

CRS20I30B
CRS20I30B

Overview
Schottky Barrier Diode CRS20I30B 1.
Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2.
Features (1) Peak forward voltage: VFM = 0.
45 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: S-FLATTM 3.
Packaging and Internal Circuit CRS20I30B 1: Anode 2: Cathode 3-2A1S 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) (Note 1) 2 A Non-repetitive peak forward surge current IFSM (Note 2) 30 Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decreas...


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