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BSM50GD120DLC

eupec
Part Number BSM50GD120DLC
Manufacturer eupec
Description IGBT
Published Aug 2, 2016
Detailed Description Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC Höchstzulässige Werte / Maximum...
Datasheet PDF File BSM50GD120DLC PDF File

BSM50GD120DLC
BSM50GD120DLC

Overview
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw.
current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min.
VCES IC,nom.
IC ICRM Ptot VGES IF IFRM I2t VISOL 1200 50 85 100 350 +/- 20V 50 100 430 2,5 V A A A W V A A A2s kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage IC = 50A, VGE = 15V, Tvj = 25°C IC = 50A, VGE = 15V, Tvj = 125°C IC = 2mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V.
.
.
+15V Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1200V, V GE = 0V, Tvj = 25°C VCE = 1200V, V GE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Mark Münzer approved by: M.
Hierholzer date of publication: 09.
09.
1999 revision: 2 VCE sat min.
- typ.
2,1 2,4 max.
2,6 2,9 V V VGE(th) 4,5 5,5 6,5 V QG - 0,53 - µC Cies - 3,3 - nF Cres - 0,21 - nF ICES - 2 84 µA - 200 - µA IGES - - 400 nA 1(8) Seriendatenblatt_BSM50GD120DLC.
xls Technische Information / Technical Information IGB...


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