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IS42R86400F

ISSI
Part Number IS42R86400F
Manufacturer ISSI
Description 512Mb SDRAM
Published Aug 2, 2016
Detailed Description IS42R86400F/16320F, IS45R86400F/16320F IS42S86400F/16320F, IS45S86400F/16320F 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Cloc...
Datasheet PDF File IS42R86400F PDF File

IS42R86400F
IS42R86400F


Overview
IS42R86400F/16320F, IS45R86400F/16320F IS42S86400F/16320F, IS45S86400F/16320F 32Mx16, 64Mx8 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.
3V-3.
6V IS42/45SxxxxxF - Vdd/Vddq = 3.
3V IS42/45RxxxxxF - Vdd/Vddq = 2.
5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Auto Refresh (CBR) • Self Refresh • 8K refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC) JULY 2017 device OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.
All inputs and outputs signals refer to the rising edge of the clock input.
The 512Mb SDRAM is organized as follows.
PACKAGE INFORMATION IS42/45S16320F IS42/45S86400F IS42/45R16320F IS42/45R86400F 8M x 16 x 4 banks 16M x 8 x 4 banks 54-pin TSOP-II 54-pin TSOP-II 54-ball TF-BGA KEY TIMING PARAMETERS Parameter Clk Cycle Time CAS Latency = 3 CAS Latency = 2 Clk Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 -5 -6 5 6 10 10 200 167 100 100 5 5.
4 6 6 -7 Unit 7 ns 7.
5 ns 143 Mhz 133 Mhz 5.
4 ns 5.
4 ns ADDRESS TABLE Parameter Configuration Bank Address Pins/Balls Autoprecharge Pins/Ball Row Address Column Address Refresh Count Com.
/Ind.
/A1 A2 32M x 16 8M x 16 x 4 banks BA0, BA1 A10/AP 8K(A0 – A12) 1K(A0 – A9) 8K / 64ms 8K / 16ms 64M x 8 16M x 8 x 4 banks BA0, BA1 A10/AP 8K(A0 – A12) 2K(A0 – A9, A11) 8K / 64ms 8K / 16ms Copyr...


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