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HD50N06

HAOLIN
Part Number HD50N06
Manufacturer HAOLIN
Description 60V N-Channel MOSFET
Published Aug 2, 2016
Detailed Description HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Or...
Datasheet PDF File HD50N06 PDF File

HD50N06
HD50N06

Overview
HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
022 Ω (Typ.
) @V GS=10V  100% Avalanche Tested TO-252 TO-251 HD50N06 HU50N06 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Conti...


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